As silicon-based electronics are expected to grasp their absolute limits on performance around 2020, new equipment have been planned to carry on the development in the contraction of electronic devices. One of these methodologies involves assembling Field-Effect Transistors (FETs) straight on carbon nanotubes (CNTs). The resultant devices are on the scale of mere nanometers, while their fabrication is still a test.
|SEM image of an eight-transistor (8-T) unit that was fabricated on two CNTs . The scale bar is 100 µm. Credit: Pei, et al. ©2014 American Chemical Society|
Credit: Pei, et al. ©2014 American Chemical Society
Now in a fresh paper distributed in Nano Letters, scientists Tian Pei, et al., at Peking University in Beijing, China, have established a modular process for creating complex integrated circuits (ICs) made from many FETs on separate CNTs. To exhibit, they assembled an 8-bits BUS system, a circuit that is commonly used for transporting data in computers, which comprises of 46 FETs on six CNTs. This is the utmost complex CNT IC invented to date, and this process is estimated to lead to even further complex circuits. The first Field-Effect Transistors (FETs) directly on carbon nanotubes (CNTs), was fabricated in 1998, scientists have been working hard to advance CNT-based electronics. As the researchers describe in their issued paper, semiconducting CNTs are hopeful candidates for substituting silicon wires as they are thinner, which propose better scaling-down potential, and also because they have a higher exporter flexibility, causing in higher working speeds.
CNT-based electronics still have to face many challenges. One of the most important challenges is gaining arrays of semiconducting CNTs while eliminating the less-suitable metallic CNTs. Even though researchers have planned a range of ways to distinct semiconducting and metal.
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